FS1009BW SCR DATASHEET

FS1009BW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Triggering gate current (I_GT): 2 mA

Package: TO‑220AB

 

FS1009BW Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

FS1009BW Datasheet

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Description

FS1009.W STANDARD SCR TO220-F (FULLY ISOLATED CASE) On-State Current Gate Trigger Current 10 Amp 2 mA to 15 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled K A Rectifier use a high performance G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit I On-state Current 180º Conduction Angle,