All Transistors. SCR. FS1009BW Datasheet

 

FS1009BW SCR DATASHEET

FS1009BW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 10 A
   Non repetitive surge peak on-state current (ITSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Triggering gate current (IGT): 2 mA

Package: TO‑220AB

 

FS1009BW Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS1009BW Datasheet

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FS1009BW
 datasheet

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FS1009BW
 datasheet #2

Description

FS1009.W STANDARD SCR TO220-F (FULLY ISOLATED CASE) On-State Current Gate Trigger Current 10 Amp 2 mA to 15 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled K A Rectifier use a high performance G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit I On-state Current 180º Conduction Angle,

 
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