FS1009DH SCR DATASHEET

FS1009DH ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Triggering gate current (I_GT): 2 mA

Package: TO‑220F

 

FS1009DH Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

FS1009DH Datasheet

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Description

FS1009.H STANDARD SCR On-State Current Gate Trigger Current T O 2 2 0 - A B 10 Amp 2 mA to 15 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled Rectifier use a high performance K A G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180º Conduction Angle, Tc = 11