All Transistors. SCR. FS1210MI Datasheet

 

FS1210MI SCR DATASHEET

FS1210MI ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 140 A
   Critical rate of rise of off-state voltage (dV/dt): 400 V/µs
   Triggering gate current (IGT): 2 mA

Package: TO‑263

 

FS1210MI Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS1210MI Datasheet

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FS1210MI
 datasheet

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FS1210MI
 datasheet #2

Description

FS12 12A - SCR On-State Current Gate Trigger Current TO-252AA (DPAK) 12 Amp 200 µA to 25mA (FS12xxxD) Off-State Voltage TO-263AB (D2PAK) A (FS12xxxG) 400 V ÷ 800 V FEATURES A K • Glass/passivated die junctions A • Low current SCR G • Low thermal resistance K A • High surge current capability G • Low forward voltage drop TO220-F TO-251AA (IPAK) • Solder dip 260ºC, 10s (FS12xxxW) (FS12xxxI) • Component in accordance to RoHS 2011/65/EU and WEEE 2002/96/E

 
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