All Transistors. SCR. FS2510DH Datasheet

 

FS2510DH SCR DATASHEET

FS2510DH ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Triggering gate current (IGT): 2 mA

Package: TO‑263

 

FS2510DH Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS2510DH Datasheet

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FS2510DH
 datasheet

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FS2510DH
 datasheet #2

Description

FS25...H STANDARD SCR T O 2 2 0 - A B On-State Current Gate Trigger Current 25 Amp 2 mA to 40 mA Off-State Voltage 200 V to 800 V These series of Silicon Controlled K A Rectifier use a high performance G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180º Conduction Angle, Tc = 11

 
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