All Transistors. SCR. FS2514BW Datasheet

 

FS2514BW SCR DATASHEET

FS2514BW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 270 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Triggering gate current (IGT): 4 mA

Package: TO‑220F

 

FS2514BW Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS2514BW Datasheet

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FS2514BW
 datasheet

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FS2514BW
 datasheet #2

Description

FS25...W STANDARD SCR TO220-F On-State Current Gate Trigger Current (FULLY ISOLATED CASE) 25 Amp 2 mA to 40 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled Rectifier use a high performance PNPN technology. K A G These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180 ° Conductio

 
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