GSC50CT120 SCR DATASHEET

GSC50CT120 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 50 A
   Maximum RMS on-state current (I_T(RMS)): 80 A
   Non repetitive surge peak on-state current (I_TSM): 1430 A
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.35 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 200 mA

Package: TO‑208AC

 

GSC50CT120 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

GSC50CT120 Datasheet

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Description

GSC50CT20 thru GSC50CT160 VRRM = 200 V - 1600 V Silicon Medium Power IF(AV) = 50 A Thyristor DO-208AC Package Features • Types up to 1600 V VRRM • Superior surge capabilities • Low thermal resistance • Excellent dynamic characteristics • Vacuum welding technology Maximum ratings, at Tc= 94°C for 20-120; Tc= 90°C for 160, unless otherwise specified Parameter Symbol Conditions GSC50CT20 GSC50CT40 GSC50CT120 GSC50CT160 Unit VRRM Repetitive peak reverse voltage 200 40