All Transistors. SCR. GSC50CT120 Datasheet

 

GSC50CT120 SCR DATASHEET

GSC50CT120 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 50 A
   Maximum RMS on-state current (IT(RMS)): 80 A
   Non repetitive surge peak on-state current (ITSM): 1430 A
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 200 mA

Package: TO‑208AC

 

GSC50CT120 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

GSC50CT120 Datasheet

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GSC50CT120
 datasheet

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GSC50CT120
 datasheet #2

Description

GSC50CT20 thru GSC50CT160 VRRM = 200 V - 1600 V Silicon Medium Power IF(AV) = 50 A Thyristor DO-208AC Package Features • Types up to 1600 V VRRM • Superior surge capabilities • Low thermal resistance • Excellent dynamic characteristics • Vacuum welding technology Maximum ratings, at Tc= 94°C for 20-120; Tc= 90°C for 160, unless otherwise specified Parameter Symbol Conditions GSC50CT20 GSC50CT40 GSC50CT120 GSC50CT160 Unit VRRM Repetitive peak reverse voltage 200 40

 
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