GSC50CT40 SCR DATASHEET

GSC50CT40 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 2000 V
   Maximum average on-state current (I_T(AVR)): 280 A
   Non repetitive surge peak on-state current (I_TSM): 3000 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.07 K/W
   Peak on-state voltage drop (V_TM): 3.2 V

 

GSC50CT40 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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GSC50CT40 Datasheet

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Description

GSC50CT20 thru GSC50CT160 VRRM = 200 V - 1600 V Silicon Medium Power IF(AV) = 50 A Thyristor DO-208AC Package Features • Types up to 1600 V VRRM • Superior surge capabilities • Low thermal resistance • Excellent dynamic characteristics • Vacuum welding technology Maximum ratings, at Tc= 94°C for 20-120; Tc= 90°C for 160, unless otherwise specified Parameter Symbol Conditions GSC50CT20 GSC50CT40 GSC50CT120 GSC50CT160 Unit VRRM Repetitive peak reverse voltage 200 40