All Transistors. SCR. GSC51CT20 Datasheet

 

GSC51CT20 SCR DATASHEET

GSC51CT20 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 2000 V
   Maximum average on-state current (IT(AVR)): 280 A
   Non repetitive surge peak on-state current (ITSM): 3000 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.07 K/W
   Peak on-state voltage drop (VTM): 3.2 V

 

GSC51CT20 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

GSC51CT20 Datasheet

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GSC51CT20
 datasheet

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GSC51CT20
 datasheet #2

Description

GSC51CT20 VRRM = 200 V Silicon Medium Power IF(AV) = 50 A Thyristor DO-208AC Package Features • 200 V VRRM • Superior surge capabilities • Low thermal resistance • Excellent dynamic characteristics • Vacuum welding technology Maximum ratings, at Tc= 94°C, unless otherwise specified Parameter Symbol Conditions 51CT20 Unit V VRRM R titi k lt 200 V Repetitive peak reverse voltage 200 V VRSM Non-repetitive peak voltage 300 V IRRM TJ=TJ max Repetitive peak reverse

 
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