H100KPN SCR DATASHEET

H100KPN ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 2000 V
   Maximum average on-state current (I_T(AVR)): 670 A
   Non repetitive surge peak on-state current (I_TSM): 10500 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.03 K/W
   Peak on-state voltage drop (V_TM): 3.3 V

 

H100KPN Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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H100KPN Datasheet

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Description

H100KPN PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator IT(AV) 3500 A  Low on-state and switching losses VDRM/VRRM 4500-5500V Typical Applications  AC controllers ITSM 45 kA  DC and AC motor control I2t 10130 103A2S  Controlled rectifiers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55C 3990 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side