H89KPN SCR DATASHEET

H89KPN ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 300 V
   Maximum average on-state current (I_T(AVR)): 0.5 A
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Critical repetitive rate of rise of on-state current (dI/dt): 30 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 200 K/W
   Junction to case thermal resistance (R_TH(j-c)): 100 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 5 mA

Package: SOT‑89

 

H89KPN Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

H89KPN Datasheet

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Description

H89KPN PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator IT(AV) 2300 A  Low on-state and switching losses Typical Applications VDRM/VRRM 4500-5500V  AC controllers ITSM 32 kA  DC and AC motor control I2t 5120 103A2S  Controlled rectifiers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55C 2820 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side co