All Transistors. SCR. HML1225 Datasheet

 

HML1225 SCR DATASHEET

HML1225 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 0.8 A
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 5 mA

Package: TO‑92

 

HML1225 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

HML1225 Datasheet

Page #1

HML1225
 datasheet

Page #2

HML1225
 datasheet #2

Description

Spec. No. : HA200406 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2004.08.13 MICROELECTRONICS CORP. Page No. : 1/3 HML1225/HXL1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HML1225/HXL1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. TO-92 Absolute Maximum Ratings (TA=25°C) Parameter Part No. Symbol Min Max Unit Test Conditions Repetitive Peak Off State

 
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