HMX1225 SCR DATASHEET

HMX1225 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 3 mA

Package: TO‑225

 

HMX1225 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

HMX1225 Datasheet

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Description

Spec. No. : HM200501 HI-SINCERITY Issued Date : 2000.07.01 Revised Date : 2005.07.07 MICROELECTRONICS CORP. Page No. : 1/4 HMX1225 / HMM1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SOT-89 Absolute Maximum Ratings (TA=25°C) Parameter Part No. Symbol Min. Max. Unit Test Conditions HMX1225 VDRM 380 - V