HSB100-6 Triac DATASHEET

HSB100-6 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 6 A
   Non repetitive surge peak on-state current (I_TSM): 60 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.4 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 25 mA

Package: TO‑220AB

 

HSB100-6 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

HSB100-6 Datasheet

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Description

HSB100-6 ◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 HSB100-6 Sensitive Gate VDRM = 400V Silicon Controlled Rectifiers IT(RMS) = 0.8A Features • Repetitive Peak Off-State Voltage : 400V • R.M.S On-State Current(IT(RMS)=0.8A) • Low On-State Voltage (1.2V(Typ.)@ ITM) TO-92 General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detec