HST06 Triac Spec
HST06 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 16 A
Non repetitive surge peak on-state current (ITSM): 160 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 1.4 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 25 mA
Holding current (IH): 25 mA
Package: TO‑220AB
HST06 Spec
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Description
Spec. No. : HE200902 HI-SINCERITY Issued Date : 2009.08.15 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 HST06 TRIAC 600V,6A Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TO-220AB Pin Configuration Pin Description Symbol tab 1 Main terminal 1 T2 T1 2 Main terminal 2 1 2 3 3 Gate


