All Transistors. SCR. HTB1A60 Datasheet

 

HTB1A60 Triac DATASHEET

HTB1A60 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 25 mA
   Holding current (IH): 30 mA

Package: TO‑225

 

HTB1A60 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

HTB1A60 Datasheet

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HTB1A60
 datasheet

Page #2

HTB1A60
 datasheet #2

Description

HTB1-800 VDRM = 800 V BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) IT(RMS) = 1.0A FEATURES 3.T2 Symbol Repetitive Peak Off-State Voltage: 800V R.M.S On-state Current (IT(RMS)=1A) 2.Gate High Commutation dv/dt 1.T1 TO-92 1. T1 General Description 2. Gate 3. T2 3 The TRIAC HTB1-800 is suitable for AC switching application, phase 2 control application such as heater control, motor control, lighting control, 1 and static switching relay. Absolute Maximum Ratings ( a T =2

 
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