HTB1A60 Triac DATASHEET
HTB1A60 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 25 mA
Holding current (IH): 30 mA
Package: TO‑225
HTB1A60 Datasheet
Page #1
Page #2
Description
HTB1-800 VDRM = 800 V BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) IT(RMS) = 1.0A FEATURES 3.T2 Symbol Repetitive Peak Off-State Voltage: 800V R.M.S On-state Current (IT(RMS)=1A) 2.Gate High Commutation dv/dt 1.T1 TO-92 1. T1 General Description 2. Gate 3. T2 3 The TRIAC HTB1-800 is suitable for AC switching application, phase 2 control application such as heater control, motor control, lighting control, 1 and static switching relay. Absolute Maximum Ratings ( a T =2
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |