All Transistors. SCR. HTP8A60H Datasheet

 

HTP8A60H Triac DATASHEET

HTP8A60H ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.4 V
   Triggering gate current (IGT): 35 mA
   Holding current (IH): 45 mA

Package: TO‑220F

 

HTP8A60H Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

HTP8A60H Datasheet

Page #1

HTP8A60H
 datasheet

Page #2

HTP8A60H
 datasheet #2

Description

2.T2 Symbol VDRM = 600 V IT(RMS) = 4.0A 3.Gate HTx4-600S 1.T1 NON INSULATED TYPE IGT(MAX) = 10mA SENSITIVE GATE TRIAC 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=4A) High Commutation dv/dt Sensitive Gate Triggering 4 Mode HTP4-600S HTC4-600S HTM4-600S General Description The devices is sensitive gate TRIAC suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC swit

 
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