HTS12A80H Triac DATASHEET

HTS12A80H ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.4 V
   Triggering gate current (I_GT): 35 mA
   Holding current (I_H): 55 mA

Package: TO‑220F

 

HTS12A80H Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

HTS12A80H Datasheet

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Description

2.T2 Symbol VDRM = 600 V IT(RMS) = 4.0A 3.Gate HTx4-600S 1.T1 NON INSULATED TYPE IGT(MAX) = 10mA SENSITIVE GATE TRIAC 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=4A) High Commutation dv/dt Sensitive Gate Triggering 4 Mode HTP4-600S HTC4-600S HTM4-600S General Description The devices is sensitive gate TRIAC suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC swit