HTS16A60H Triac DATASHEET
HTS16A60H ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 25 mA
Holding current (IH): 30 mA
Package: TO‑220F
HTS16A60H Datasheet
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Description
2.T2 Symbol VDRM = 600 V IT(RMS) = 4.0A 3.Gate HTx4-600S 1.T1 NON INSULATED TYPE IGT(MAX) = 10mA SENSITIVE GATE TRIAC 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=4A) High Commutation dv/dt Sensitive Gate Triggering 4 Mode HTP4-600S HTC4-600S HTM4-600S General Description The devices is sensitive gate TRIAC suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC swit
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |