HTS8A80AS SCR DATASHEET
HTS8A80AS ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 380 V
Maximum average on-state current (IT(AVR)): 0.5 A
Maximum RMS on-state current (IT(RMS)): 0.8 A
Critical repetitive rate of rise of on-state current (dI/dt): 30 A/µs
Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 200 K/W
Junction to case thermal resistance (RTH(j-c)): 100 K/W
Triggering gate voltage (VGT): 0.8 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 5 mA
Package: TO‑92
HTS8A80AS Datasheet
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Description
VDRM = 1000 V IT(RMS) = 8 A ITSM = 84 A HTS8A80AS IGT = 10 mA 8A TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 1000V R.M.S On–State Current (IT(RMS) = 8A) Gate Trigger Current : 10mA dV/dt 600V/us TO-220F General Description The HTS8A80AS suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static T1 T2 relays, heating regulation, induction motor starting ciruits or for G phase control operation in l
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |