HTU4-600 SCR DATASHEET
HTU4-600 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 60 V
Maximum average on-state current (IT(AVR)): 0.5 A
Maximum RMS on-state current (IT(RMS)): 6 A
Non repetitive surge peak on-state current (ITSM): 30 A
Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
Triggering gate voltage (VGT): 0.55 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 0.01 mA
Holding current (IH): 5 mA
Package: TO‑206AA
HTU4-600 Datasheet
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Description
VDRM = 600 V IT(RMS) = 4.0 A HTD4-600 / HTU4-600 600V 4A TRIAC 1.T1 2. T2 3. Gate FEATURES TO-251 TO-252 2 Repetitive Peak Off-State Voltage: 600V 1 R.M.S On-State Current (IT(RMS) = 4A) 1 3 2 High Commutation dv/dt 3 Sensitive Gate Triggering 4 Mode HTU4-600 HTD4-600 General Description The devices is sensitive gate TRIAC suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC switching applications, such
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |