All Transistors. SCR. IQAG35S120A1 Datasheet

 

IQAG35S120A1 SCR DATASHEET

IQAG35S120A1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 35 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..79 °C
   Triggering gate voltage (VGT): 0.78 V
   Peak on-state voltage drop (VTM): 1.55 V
   Triggering gate current (IGT): 62 mA

Package: SOT‑227

 

IQAG35S120A1 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

IQAG35S120A1 Datasheet

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IQAG35S120A1
 datasheet

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IQAG35S120A1
 datasheet #2

Description

IQAG35S120A1 Silicon Controlled Rectifier 1200V, 35A in TO247 Package  High voltage & high current  Low on-state voltage  Suitable for over voltage control, motor control K circuit and heating control system A  Pb-free lead finish; RoHS compliant G MAXIMUM RATINGS, T = 25oC unless otherwise noted C Parameter Symbol Value Units Average on-state current IT(AV) 35 o TC= 79oC, Tj= 180 C conduction half sine wave A Continuous RMS on-state current as AC switch IT(RMS)

 
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