IQCG20S120C3 SCR Spec

IQCG20S120C3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1600 V
   Maximum average on-state current (I_T(AVR)): 55 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..90 °C
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.65 V
   Triggering gate current (I_GT): 100 mA

Package: SOT‑227

 

IQCG20S120C3 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

IQCG20S120C3 Spec

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Description

IQCG20S120C3 Silicon Controlled Rectifier, 1200/ 20A In Isolated TO247 Package  Pb-free lead finish; RoHS compliant 1 2 1 2 4 5 4 5 MAXIMUM RATINGS (per SCR), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Average on-state current I 20 T(AV) T = 85oC, T = 125oC C j A Non-repetitive surge peak on-state current 340 I TSM T = 125oC, t = 10 ms j p I2t value for fusing I2t 574 A2s T = 125oC, t = 10 ms j p Rate of rise of on-state current dI/dt