All Transistors. SCR. IQCG20S120C3 Datasheet

 

IQCG20S120C3 SCR DATASHEET

IQCG20S120C3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 55 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..90 °C
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.65 V
   Triggering gate current (IGT): 100 mA

Package: SOT‑227

 

IQCG20S120C3 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

IQCG20S120C3 Datasheet

Page #1

IQCG20S120C3
 datasheet

Page #2

IQCG20S120C3
 datasheet #2

Description

IQCG20S120C3 Silicon Controlled Rectifier, 1200/ 20A In Isolated TO247 Package  Pb-free lead finish; RoHS compliant 1 2 1 2 4 5 4 5 MAXIMUM RATINGS (per SCR), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Average on-state current I 20 T(AV) T = 85oC, T = 125oC C j A Non-repetitive surge peak on-state current 340 I TSM T = 125oC, t = 10 ms j p I2t value for fusing I2t 574 A2s T = 125oC, t = 10 ms j p Rate of rise of on-state current dI/dt

 
Back to Top