IQCG20S120C3 SCR DATASHEET
IQCG20S120C3 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 55 A
Maximum operating junction and storage temperature range (Tstg, Tj): ..90 °C
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 100 mA
Package: SOT‑227
IQCG20S120C3 Datasheet
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Description
IQCG20S120C3 Silicon Controlled Rectifier, 1200/ 20A In Isolated TO247 Package Pb-free lead finish; RoHS compliant 1 2 1 2 4 5 4 5 MAXIMUM RATINGS (per SCR), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Average on-state current I 20 T(AV) T = 85oC, T = 125oC C j A Non-repetitive surge peak on-state current 340 I TSM T = 125oC, t = 10 ms j p I2t value for fusing I2t 574 A2s T = 125oC, t = 10 ms j p Rate of rise of on-state current dI/dt
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |