IQIG35S120C3 SCR DATASHEET

IQIG35S120C3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 95 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..85 °C
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 150 mA

Package: SOT‑227

 

IQIG35S120C3 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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IQIG35S120C3 Datasheet

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Description

IQIG35S120C3 PRELIMINARY DATASHEET Anti-Parallel Silicon Controlled Rectifier 1 1200V, 35A in SOT227 Package 2 1 3 3  High voltage & high current  Low on-state voltage 4  Suitable for over voltage control, motor control 2 4 circuit and heating control system  Pb-free lead finish; RoHS compliant MAXIMUM RATINGS (per SCR), T = 25oC unless otherwise noted C Parameter Symbol Value Units Average on-state current IT(AV) 35 o TC= 79oC, Tj= 180 C conduction half sine