All Transistors. SCR. IQTG35S120I4 Datasheet

 

IQTG35S120I4 SCR-module DATASHEET

IQTG35S120I4 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 70 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..82 °C
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.4 V
   Triggering gate current (IGT): 100 mA

 

IQTG35S120I4 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

IQTG35S120I4 Datasheet

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IQTG35S120I4
 datasheet

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IQTG35S120I4
 datasheet #2

Description

IQTG35S120I4 PRELIMINARY DATASHEET Phase Control Thyristor, Half-Bridge Configuration In iQPakTM Power Module Package  Electrically isolated baseplate  High surge capability  General purpose thyristors  Pb-free lead finish; RoHS compliant MAXIMUM RATINGS (per leg), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Average on-state current I 35 T(AV) T = 79oC, 180oC conduction, half sine wave C RMS on-state current I 55 T(RMS) A Non-repetitiv

 
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