IQTG35S120I4 SCR-module DATASHEET
IQTG35S120I4 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 70 A
Maximum operating junction and storage temperature range (Tstg, Tj): ..82 °C
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.4 V
Triggering gate current (IGT): 100 mA
IQTG35S120I4 Datasheet
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Description
IQTG35S120I4 PRELIMINARY DATASHEET Phase Control Thyristor, Half-Bridge Configuration In iQPakTM Power Module Package Electrically isolated baseplate High surge capability General purpose thyristors Pb-free lead finish; RoHS compliant MAXIMUM RATINGS (per leg), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Average on-state current I 35 T(AV) T = 79oC, 180oC conduction, half sine wave C RMS on-state current I 55 T(RMS) A Non-repetitiv
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |