JCT640B SCR DATASHEET

JCT640B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 40 A
   Non repetitive surge peak on-state current (I_TSM): 460 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.3 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 35 mA
   Holding current (I_H): 75 mA

Package: TO220A

 

JCT640B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

JCT640B Datasheet

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Description

 JIEJIE MICROELECTRONICS CO. , Ltd JCT640/840 Series 40A SCRs Rev.3.0 DESCRIPTION: JCTx40 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, 1 1 2 2 3 3 provide high dv/dt rate with strong resistance to TO-220A: TO-220B: Insulated Non-Insulated electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. 1 JCTx40A provides insulation voltag