JCT840A SCR DATASHEET
JCT840A ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 40 A
Non repetitive surge peak on-state current (ITSM): 460 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 1 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 35 mA
Holding current (IH): 75 mA
Package: TO220F
JCT840A Datasheet
Page #1
Page #2
Description
JIEJIE MICROELECTRONICS CO. , Ltd JCT640/840 Series 40A SCRs Rev.3.0 DESCRIPTION: JCTx40 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, 1 1 2 2 3 3 provide high dv/dt rate with strong resistance to TO-220A: TO-220B: Insulated Non-Insulated electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc. 1 JCTx40A provides insulation voltag
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |