K3503FD450 SCR DATASHEET
K3503FD450 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.2 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 3 A
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 40 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 16 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 3 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.4 V
Triggering gate current (IGT): 0.1 mA
Holding current (IH): 5 mA
Package: TO‑252
K3503FD450 Datasheet
Page #1
Page #2
Description
Date:- 17 Nov, 2004 Data Sheet Issue:- 1a WESTCODE An IXYS Company Provisional Data Medium Voltage Thyristor Types K3503F#450 to K3503F#520 (Development Type No. KX094FC450-520) Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V DRM Repetitive peak off-state voltage, (note 1) 4500-5200 V V DSM Non-repetitive peak off-state voltage, (note 1) 4500-5200 V V RRM Repetitive peak reverse voltage, (note 1) 4500-5200 V V RSM Non-repetitive peak reverse voltage, (note
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |