KC3FB40H SCR Spec
KC3FB40H ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.2 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 5 A
Non repetitive surge peak on-state current (ITSM): 90 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 3 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 0.1 mA
Holding current (IH): 5 mA
Package: TO‑252
KC3FB40H Spec
Page #1
Page #2
Description
T yitr h r so S MD ■外観図 OUT IE LN Unt i :mm P cae B akg:F K 3 B 0 C F 4H 40 A 0 V3 ④ 特長 煙小型 SMD 品名略号 KC340H 煙t保証 q 000000 煙高感度品 ロ ト記号 ッ (例) F aue etr 煙S l MD mal S 煙tGurne q aate ① ② ③ ① ②④ 煙Hg esit ihS nivy ti ③ 外形図については新電元 We bサイトをご参照下さい。捺印表示については 捺印仕様をご確認


