KCR100-6R SCR Spec

KCR100-6R ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Triggering gate voltage (V_GT): 2 V
   Triggering gate current (I_GT): 0.8 mA

 

KCR100-6R Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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KCR100-6R Spec

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Description

SMD Type Thyristor Silicon Controlled Rectifier MCR100 (KCR100) ■ Features 1.70 0.1 ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V 0.42 0.1 MCR100-8: 600 V 0.46 0.1 MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ，Tstg : -55℃ to +150℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit On State Voltage (Note.1) VTM ITM= 1 A 1.7 Gate Trigger Vol