KCR100-6R SCR DATASHEET

KCR100-6R ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Triggering gate voltage (V_GT): 2 V
   Triggering gate current (I_GT): 0.8 mA

KCR100-6R Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

KCR100-6R Datasheet

Page #1

Page #2

Description

SMD Type Thyristor Silicon Controlled Rectifier MCR100 (KCR100) ■ Features 1.70 0.1 ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V 0.42 0.1 MCR100-8: 600 V 0.46 0.1 MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ，Tstg : -55℃ to +150℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit On State Voltage (Note.1) VTM ITM= 1 A 1.7 Gate Trigger Vol

LIST

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. KCR100-6R Datasheet