M40T100A Triac DATASHEET

M40T100A ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 40 A
   Non repetitive surge peak on-state current (I_TSM): 400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.8 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 60 mA

 

M40T100A Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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M40T100A Datasheet

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Description

RoHS M40T Series RoHS SEMICONDUCTOR TRIACs, 40A Sunbberless FEATURES T2 T1 High current triac G Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-3 package High commutation capability Packages are RoHS compliant APPLICATIONS Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. MAIN FEATURES By using an internal ceramic pad, the M40T series provides voltag