MAC16D Triac DATASHEET
MAC16D ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 15 A
Non repetitive surge peak on-state current (ITSM): 150 A
Critical repetitive rate of rise of on-state current (dI/dt): 9 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 0.75 V
Peak on-state voltage drop (VTM): 1.2 V
Triggering gate current (IGT): 16 mA
Holding current (IH): 20 mA
Package: TO‑220AB
MAC16D Datasheet
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Description
MAC16D, MAC16M, MAC16N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features TRIACS • Blocking Voltage to 800 Volts • On-State Current Rating of 16 Amperes RMS at 80°C 16 AMPERES RMS • Uniform Gate Trigger Currents in Three Quadrants 400 thru 800 VOLTS • High Immunity to dv/dt - 500 V/ms minimum at 125°C • Mi
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |