MAC219-4 Triac DATASHEET

MAC219-4 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 250 A
   Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 1.2 K/W
   Triggering gate voltage (V_GT): 1.1 V
   Peak on-state voltage drop (V_TM): 1.4 V
   Triggering gate current (I_GT): 20 mA
   Holding current (I_H): 10 mA

Package: TO‑220AB

 

MAC219-4 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MAC219-4 Datasheet

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Description

DI GI TRON S EMI CONDUCTORS MAC219 SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive off-state voltage(1) (TJ = -40 to +125°C) MAC219-4 200 VDRM Volts MAC219-6 400 MAC219-8 600 MAC219-10 800 Peak gate voltage VGM ±10 Volts RMS on-sta