MAC223A6 Triac DATASHEET

MAC223A6 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 20 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 250 A
   Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 1.2 K/W
   Triggering gate voltage (V_GT): 1.1 V
   Peak on-state voltage drop (V_TM): 1.4 V
   Triggering gate current (I_GT): 20 mA
   Holding current (I_H): 10 mA

Package: TO‑220AB

 

MAC223A6 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MAC223A6 Datasheet

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Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D MAC223 Series Triacs MAC223A Silicon Bidirectional Triode Thyristors Series . . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are needed. • Off-State Voltages to 800 Volts TRIACs • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stabilit