MAC223A8FP Triac DATASHEET
MAC223A8FP ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 40 A
Non repetitive surge peak on-state current (ITSM): 350 A
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1 K/W
Triggering gate voltage (VGT): 1.1 V
Peak on-state voltage drop (VTM): 1.4 V
Triggering gate current (IGT): 25 mA
Holding current (IH): 30 mA
Package: TO‑220AB
MAC223A8FP Datasheet
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Description
MAC223A6FP, MAC223A8FP, MAC223A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or http://onsemi.com wherever full–wave silicon–gate–controlled devices are needed. • Off–State Voltages to 800 Volts • All Diffused and Glass Passivated Junctions for Parameter Uniformity ( ) ISOLATED TRIAC and Stability 25 AMPERES RMS • S
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |