MAC224A7 Triac DATASHEET
MAC224A7 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 20 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 80 A
Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 15 mA
Package: TO‑220AB
MAC224A7 Datasheet
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Description
DI GI TRON S EMI CONDUCTORS MAC224(A) SERIES SILICON BIDIRECTIONAL TRIODE THYRISTORS 40 AMPERES RMS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) RATING SYMBOL VALUE UNIT Peak Repetitive Off-State Voltage(1) VDRM Volts (TJ = -40 to 125°C, ½ Sine Wave 50 to 60 Hz, Gate Open) MAC224-4
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |