MAC9N SCR-module DATASHEET

MAC9N ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (V_DRM): 1400 V
   Maximum average on-state current (I_T(AVR)): 130 A
   Maximum RMS on-state current (I_T(RMS)): 300 A
   Non repetitive surge peak on-state current (I_TSM): 5130 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.23 K/W

Package: Y4‑M6

 

MAC9N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MAC9N Datasheet

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC9 * SERIES *Motorola preferred devices TRIACS Silicon Bidirectional Thyristors TRIACS Designed for high performance full-wave ac control applications where high 8.0 AMPERES RMS noise immunity and high commutating di/dt are required. 400 thru 800 VOLTS • Blocking Voltage to 800 Volts • On-State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 500 V/µs minimum