All Transistors. SCR. MCK100-8 Datasheet

 

MCK100-8 SCR-module DATASHEET

MCK100-8 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 110 A
   Maximum RMS on-state current (IT(RMS)): 170 A
   Non repetitive surge peak on-state current (ITSM): 2050 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..140 °C
   Junction to case thermal resistance (RTH(j-c)): 0.3 K/W

Package: TO‑240

 

MCK100-8 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MCK100-8 Datasheet

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MCK100-8
 datasheet

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MCK100-8
 datasheet #2

Description

 VDRM = 600 V IT(RMS) = 1 A ITSM = 11 A MCK100-8 IGT = 200uA Silicon Controlled Rectifier Symbol FEATURES  Repetitive Peak Off-State Voltage: 600V  R.M.S On–State Current (IT(RMS) = 1A)  Low Gate Trigger Current: 200uA SOT-89 A Applications K Leakage detector, Electronic Ballast or protection circuit. G General Description Semihow’s SCR product is a single directional PNPN device, has a low gate trigger current and high stability in gate t

 
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