MCR08BT1 SCR DATASHEET
MCR08BT1 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.01 W
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum average on-state current (IT(AVR)): 0.8 A
Maximum RMS on-state current (IT(RMS)): 0.8 A
Non repetitive surge peak on-state current (ITSM): 10 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 200 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 5 mA
Package: TO‑92 SOT‑223 SOT‑23 SOT‑89
MCR08BT1 Datasheet
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Description
MCR08BT1 SCR 23 July 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Sensitive gate • Planar passivated for voltage ruggedness and reliability • Direct triggering from low power drivers and logic ICs • Surface mountable packag
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