All Transistors. SCR. MCR08BT1 Datasheet

 

MCR08BT1 SCR DATASHEET

MCR08BT1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.01 W
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum average on-state current (IT(AVR)): 0.8 A
   Maximum RMS on-state current (IT(RMS)): 0.8 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 200 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 5 mA

Package: TO‑92 SOT‑223 SOT‑23 SOT‑89

 

MCR08BT1 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MCR08BT1 Datasheet

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MCR08BT1
 datasheet

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MCR08BT1
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Description

MCR08BT1 SCR 23 July 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Sensitive gate • Planar passivated for voltage ruggedness and reliability • Direct triggering from low power drivers and logic ICs • Surface mountable packag

 
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