MCR08X SCR DATASHEET

MCR08X ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.01 W
   Maximum repetitive peak and off-state voltage (V_DRM): 300 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 200 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 5 mA

Package: TO‑92

 

MCR08X Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MCR08X Datasheet

Page #1

Page #2

Description

MCR08B, MCR08M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for http://onsemi.com larger thyristors, and sensing and detection circuits. Supplied in SCRs surface mount package for use in automated manufacturing. 0.8 AMPERES RMS Features 200 thru 600 VOLTS • Sensitive Gate Trigger Current G • Blocking Voltage to 600 V A K