MCR100-3 SCR DATASHEET

MCR100-3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.01 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 0.8 A
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 200 K/W
   Junction to case thermal resistance (R_TH(j-c)): 75 K/W
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.35 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 1 mA

Package: TO‑92 SOT‑89

 

MCR100-3 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MCR100-3 Datasheet

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Description

MCR100 Serise 单向可控硅/THYRISTOR 特点：阻断电压高、浪涌电流承受能力强。 Features: High Blocking Voltage、High Surge Current Capability. 极限参数/Absolute maximum ratings(Ta=25℃) 测试条件 参数符号 数值 单位 Test condition Symbol Rating Unit Tj=-40 to 110℃,Sine Wave,50 V DRM V to 60Hz,Gate Open MCR 100-3 100 V RRM MCR 100-4 200 V MCR 100-6 400 MCR 100-8 600 I T(RMS) Tc=80℃ 0.8 A 1/2 Cycle, Sine Wave, I