MCR100-8 SCR DATASHEET

MCR100-8 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Non repetitive surge peak on-state current (I_TSM): 0.8 A
   Triggering gate current (I_GT): 0.8 mA

MCR100-8 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MCR100-8 Datasheet

Page #1

Page #2

Description

LITE-ON MCR100-8 SEMICONDUCTOR SCRs Sensitive Gate 0.25 AMPERES RMS Sillicon Controlled Rectifiers 600 VOLTS Reverse Blocking Thyristors SOT-23 FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other SOT-23 logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 0.89 1.20 On–State Current Rating of 0.25 Amperes RMS at 80℃ B 0.30 0.51 High Surge Current Capability — 9 Amperes C 0.085 0.18 Minimum and Maximum Values of IGT,

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MCR100-8 Datasheet