MCR100-8G SCR DATASHEET

MCR100-8G ELECTRICAL SPECIFICATIONS

Type: SCR
Maximum repetitive peak and off-state voltage (V_DRM): 400 V

MCR100-8G Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MCR100-8G Datasheet

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Page #2

Description

MCR100-8G SCRs Description Simplified outline Glass passivated, sensitive gate thyristors in a plastic envelope, TO-92 intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 123 Symbol Features • Blocking voltage to 600 V a • k On-state RMS current to 0.8 A • Ultra low gate trigger current g Description

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MCR100-8G Datasheet