All Transistors. SCR. MCR106-6G Datasheet

 

MCR106-6G SCR DATASHEET

MCR106-6G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 100 A
   Triggering gate voltage (VGT): 1 V
   Triggering gate current (IGT): 0.02 mA

Package: TO‑252

 

MCR106-6G Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MCR106-6G Datasheet

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MCR106-6G
 datasheet

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MCR106-6G
 datasheet #2

Description

MCR106-6G,MCR106-8G SCRs Description Simplified outline Glass passivated, sensitive gate thyristors in a plastic envelope, TO-126 intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Features • Blocking voltage to 400 V a k • On-state RMS current to 4 A • g Ultra low gate trigger current Descr

 
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