MCR12X SCR DATASHEET

MCR12X ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 1.6 A
   Non repetitive surge peak on-state current (I_TSM): 15 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..110 °C
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 1 mA
   Holding current (I_H): 5 mA

Package: TO‑205AD

 

MCR12X Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MCR12X Datasheet

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Description

MCR12DG, MCR12MG, MCR12NG Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever http://onsemi.com half-wave silicon gate-controlled devices are needed. SCRs Features 12 AMPERES RMS • Blocking Voltage to 800 Volts 400 thru 800 VOLTS • On-State Current Rating of 12 Amperes RMS at 80°C G • High Surge Current Capability - 100 Amperes A K �