MCR22-8 SCR DATASHEET

MCR22-8 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 300 A
   Triggering gate voltage (V_GT): 1 V
   Triggering gate current (I_GT): 0.03 mA

Package: TO‑220

MCR22-8 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MCR22-8 Datasheet

Page #1

Page #2

Description

MCR22 Series 单向可控硅/THYRISTOR 特点：断态电压临界上升率高，大电流时正向导通电压低。 Features:High dv/dt,very Low Forward “On” Voltage at High Current. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符单测试条件数值号位 Test condition Rating Symbol Unit MCR 22-2 50 MCR 22-3 100 V DRM， R =1K GK MCR 22-4 200 V T =25 to 125℃ A V RRM MCR 22-6 400 MCR 22-8 600 I 1.5 A T(RMS) 1/2 Cycle, Sine Wave

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MCR22-8 Datasheet