All Transistors. SCR. MCR25D Datasheet

 

MCR25D SCR DATASHEET

MCR25D ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Triggering gate voltage (VGT): 1 V
   Triggering gate current (IGT): 0.03 mA

Package: TO‑220

 

MCR25D Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MCR25D Datasheet

Page #1

MCR25D
 datasheet

Page #2

MCR25D
 datasheet #2

Description

MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. http://onsemi.com Features SCRs 25 AMPERES RMS • Blocking Voltage to 800 Volts 400 thru 800 VOLTS • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability - 300 Amperes G

 
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