MCR69-3 SCR DATASHEET

MCR69-3 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 15 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 75 mA
   Holding current (I_H): 2 mA

Package: TO‑252

MCR69-3 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

MCR69-3 Datasheet

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Description

MCR69-2, MCR69-3 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features http://onsemi.com • Glass-Passivated Junctions for Greater Parameter Stability and Reliability SCRs • Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge Current 25 AMPERES RMS • Small Rugged, Thermowatt Package Constructed for Low Thermal 50 thru 100 VOLTS Resistance and Maximum Power Dissipation and Durability

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. MCR69-3 Datasheet