MCR704A SCR DATASHEET

MCR704A ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 2.6 A
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 80 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 5 mA

Package: TO‑252

 

MCR704A Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MCR704A Datasheet

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Description

MCR703A MCR704A MCR706A MCR708A www.centralsemi.com SURFACE MOUNT DESCRIPTION: SILICON CONTROLLED RECTIFIERS The CENTRAL SEMICONDUCTOR MCR703A, 4.0 AMP, 100 THRU 600 VOLT MCR704A, MCR706A, and MCR708A are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL MCR703A MCR704A MCR706A MCR708A UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 400 600 V