All Transistors. SCR. MCR708A Datasheet

 

MCR708A SCR DATASHEET

MCR708A ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum average on-state current (IT(AVR)): 2.6 A
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 80 K/W
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 2.2 V
   Triggering gate current (IGT): 25 mA
   Holding current (IH): 5 mA

Package: TO‑252

 

MCR708A Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

MCR708A Datasheet

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MCR708A
 datasheet

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MCR708A
 datasheet #2

Description

TIGER ELECTRONIC CO.,LTD Product specification Silicon Controlled Rectifiers MCR708A DESCRIPTION PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Typ Unit Repetitive peak off-state VDRM 600 V voltages VRRM Average on-state current IT(AV) 2.6 A G RMS on-state current

 
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