MCR8DSN SCR Spec

MCR8DSN ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.2 K/W
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 0.2 mA

Package: TO‑220

 

MCR8DSN Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

MCR8DSN Spec

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Description

MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer http://onsemi.com applications such as motor control; process control; temperature, light and speed control. SCRs Features 8 AMPERES RMS • Small Size 600 - 800 VOLTS • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • Available in Two Package Styles G Sur